InGaN nanorods

Composition and strain relaxation of in x Ga1-xN graded core-shell nanorods

Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy

The composition of InxGa1̃-̃xN nanorods grown by molecular beam epitaxy with nominal x~̃=~̃0.5 has been mapped by electron microscopy using Z-contrast imaging and x-ray microanalysis. This shows a coherent and highly strained core-shell structure …

Transmission electron microscopy of indium gallium nitride nanorods grown by molecular beam epitaxy

This paper demonstrates the growth of InGaN nanorods and lateral growth over nanorod arrays using molecular beam epitaxy. It is shown that nitrogen rich growth conditions result in a nanorod array and that, by changing to metal rich conditions, …