B3. Solar cells

The growth of In0.5Ga0.5N and InN layers on (1 1 1)Si using nanorod intermediate arrays

Molecular beam epitaxy has been used to grow continuous overlayers of In0.5Ga0.5N and InN on (1 1 1)Si, via growth of an intermediate nanorod arrays. Transmission electron microscopy showed that few threading dislocations are generated during nanorod …