B1. Nanomaterials

Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates

The Plasma-Assisted Molecular Beam Epitaxy (PA-MBE) of InN nanorods on Si- and C-faces of 6H-SiC substrates has been demonstrated. The optimum PA-MBE growth conditions for InN nanorods were with an indium beam equivalent pressure of ∼2.0×10-7 Torr …