A3. Molecular beam epitaxy

Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates

The Plasma-Assisted Molecular Beam Epitaxy (PA-MBE) of InN nanorods on Si- and C-faces of 6H-SiC substrates has been demonstrated. The optimum PA-MBE growth conditions for InN nanorods were with an indium beam equivalent pressure of ∼2.0×10-7 Torr …

The growth of In0.5Ga0.5N and InN layers on (1 1 1)Si using nanorod intermediate arrays

Molecular beam epitaxy has been used to grow continuous overlayers of In0.5Ga0.5N and InN on (1 1 1)Si, via growth of an intermediate nanorod arrays. Transmission electron microscopy showed that few threading dislocations are generated during nanorod …