My interests lie in the application of electron microscopy methods to determine composition, structure and defect nature of semiconductors, mainly III-nitrides. My present research includes the application of electron microscopy to InxGa1-xN nanorods and ﬁlms for use in LED and transistor devices. More speciﬁcally:
To operate, manage and train users on the JEOL F200 microscope installed in Jan 2017.
My research interests lie in studying materials using HR-STEM and tomographic techniques especially on perovskite thin films, nitrides, superlattices, and catalytic nanoparticles. One example of current work is the HR-STEM and EDX spectroscopy of AuRu branched nanoparticles studying the crystallographic relationship between the particle and the branches.
To study the growth of GaN films grown on polycrystalline diamond to utilise its high thermal conductivity and improve the reliability of HEMT and LED devices. This work mainly used TEM and related techniques. This work included the dislocation analysis of III-N films grown directly on diamond and with a novel epitaxial layer overgrowth method and the effect of AlN thickness on thermal boundary resistance.
InxGa1-xN nanorods were grown on silicon substrates grown using molecular beam epitaxy (MBE) at Nottingham University for solar cell applications. The focus of my Ph.D. thesis was the characterisation of the structure and composition of these nanorods. This was primarily achieved using electron microscopy techniques including SEM, dark-field TEM, diffraction, STEM EDX & HAADF.
Undergraduate degree in Physics, courses included: Condensed Matter Physics, Mathematical Methods, Modern Optics, Nanoscience, Particle Physics, Quantum Mechanics, Soft Condensed Matter Physics. Masters thesis on Monolithic Active Pixel Sensors (MAPS)
A-Levels include 3 As in Physics, Mathematics and Chemistry.
1/63 Cowper Street,
Randwick, NSW 2031, AUS
+61 431 534 332